Broadcom APML MOSFET, 30 mA, 1000 V, 16-Pin SO-16 APML-600JV-000E
- RS stock no.:
- 227-941
- Mfr. Part No.:
- APML-600JV-000E
- Manufacturer:
- Broadcom
Bulk discount available
Subtotal (1 unit)*
R 81,56
(exc. VAT)
R 93,79
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,350 unit(s) shipping from 29 December 2025
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Units | Per unit |
|---|---|
| 1 - 9 | R 81.56 |
| 10 - 99 | R 79.52 |
| 100 - 499 | R 77.13 |
| 500 - 999 | R 74.04 |
| 1000 + | R 71.08 |
*price indicative
- RS stock no.:
- 227-941
- Mfr. Part No.:
- APML-600JV-000E
- Manufacturer:
- Broadcom
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Broadcom | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30mA | |
| Maximum Drain Source Voltage Vds | 1000V | |
| Package Type | SO-16 | |
| Series | APML | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 1000mW | |
| Forward Voltage Vf | 1.41V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | IEC/EN/DIN EN 60747-5-5, RoHS, UL/cUL 1577 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Broadcom | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30mA | ||
Maximum Drain Source Voltage Vds 1000V | ||
Package Type SO-16 | ||
Series APML | ||
Mount Type Surface | ||
Pin Count 16 | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 1000mW | ||
Forward Voltage Vf 1.41V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals IEC/EN/DIN EN 60747-5-5, RoHS, UL/cUL 1577 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TH
The Broadcom MOSFET is a high voltage Photo MOSFET designed for automotive applications. It consists of an AlGaAs infrared light emitting diode input stage optically coupled to a high voltage output detector circuit. The detector consists of a high speed photovoltaic diode array and driver circuitry to switch on/off two discrete high voltage MOSFETs.
Compact solid state bidirectional signal switch
Qualified to AEC-Q101 test guidelines
Avalanche rated MOSFETs
Low off state leakage
Related links
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