Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET, 290 A, 40 V Enhancement, 5-Pin LFPAK
- RS stock no.:
- 219-338
- Mfr. Part No.:
- PSMN1R0-40YSHX
- Manufacturer:
- Nexperia
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Bulk discount available
Subtotal (1 tape of 1 unit)*
R 64,73
(exc. VAT)
R 74,44
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,500 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | R 64.73 |
| 10 - 99 | R 63.11 |
| 100 - 499 | R 61.22 |
| 500 - 999 | R 58.77 |
| 1000 + | R 56.42 |
*price indicative
- RS stock no.:
- 219-338
- Mfr. Part No.:
- PSMN1R0-40YSHX
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 290A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NextPower-S3 Schottky-Plus technology | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 290A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NextPower-S3 Schottky-Plus technology | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control, battery protection, and load-switch/eFuse solutions. It offers high efficiency and reliable performance across a wide range of power management tasks.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
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