STMicroelectronics SCT Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin

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R 1 471,40

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R 1 692,11

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1 - 9R 1,471.40
10 +R 1,434.62

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Packaging Options:
RS stock no.:
215-223
Mfr. Part No.:
SCT015W120G3-4AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

167nC

Maximum Power Dissipation Pd

673W

Maximum Gate Source Voltage Vgs

4.2 V

Maximum Operating Temperature

200°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Extremely low gate charge and input capacitance

Very fast and robust intrinsic body diode

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