STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA40N12G24AG

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Subtotal (1 tube of 30 units)*

R 12 080,13

(exc. VAT)

R 13 892,16

(inc. VAT)

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30 +R 402.671R 12,080.13

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RS stock no.:
214-972
Mfr. Part No.:
SCTWA40N12G24AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Series

SCTWA40N12G24AG

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

105mΩ

Channel Mode

Enhancement

Forward Voltage Vf

3.4V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

63nC

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

290W

Maximum Operating Temperature

200°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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