IXYS HiperFET, Polar Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-220 IXFP12N50P
- RS stock no.:
- 194-619
- Distrelec Article No.:
- 304-29-646
- Mfr. Part No.:
- IXFP12N50P
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 341,86
(exc. VAT)
R 393,14
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 55 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 68.372 | R 341.86 |
| 10 - 15 | R 66.662 | R 333.31 |
| 20 - 45 | R 64.662 | R 323.31 |
| 50 - 95 | R 62.076 | R 310.38 |
| 100 + | R 59.592 | R 297.96 |
*price indicative
- RS stock no.:
- 194-619
- Distrelec Article No.:
- 304-29-646
- Mfr. Part No.:
- IXFP12N50P
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | HiperFET, Polar | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.15mm | |
| Width | 4.83 mm | |
| Length | 10.66mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series HiperFET, Polar | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 200W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Height 9.15mm | ||
Width 4.83 mm | ||
Length 10.66mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IXFP26N50P3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247