STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N

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Subtotal (1 tape of 5 units)*

R 311,19

(exc. VAT)

R 357,87

(inc. VAT)

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Last RS stock
  • Final 2,250 unit(s), ready to ship from another location

Units
Per unit
Per Tape*
5 - 45R 62.238R 311.19
50 - 95R 60.682R 303.41
100 - 495R 58.862R 294.31
500 - 995R 56.508R 282.54
1000 +R 54.248R 271.24

*price indicative

Packaging Options:
RS stock no.:
151-952
Mfr. Part No.:
STD13NM60N
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

MDmesh II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.36Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

27nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

10.1mm

Standards/Approvals

RoHS

Height

2.4mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

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