STMicroelectronics SuperMESH Type N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin IPAK STD3NK60Z-1
- RS stock no.:
- 151-949
- Mfr. Part No.:
- STD3NK60Z-1
- Manufacturer:
- STMicroelectronics
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Subtotal (1 tube of 75 units)*
R 561,825
(exc. VAT)
R 646,125
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,700 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 675 | R 7.491 | R 561.83 |
| 750 - 1425 | R 7.304 | R 547.80 |
| 1500 + | R 7.085 | R 531.38 |
*price indicative
- RS stock no.:
- 151-949
- Mfr. Part No.:
- STD3NK60Z-1
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK | |
| Series | SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11.8nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK | ||
Series SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11.8nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
Related links
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