STMicroelectronics SuperMESH N-Channel MOSFET, 9 A, 400 V Enhancement, 3-Pin TO-263 STB11NK40ZT4

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Subtotal (1 tape of 5 units)*

R 285,15

(exc. VAT)

R 327,90

(inc. VAT)

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  • Plus 1,975 unit(s) shipping from 15 September 2026
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Units
Per unit
Per Tape*
5 - 45R 57.03R 285.15
50 - 95R 55.604R 278.02
100 - 495R 53.936R 269.68
500 +R 51.778R 258.89

*price indicative

Packaging Options:
RS stock no.:
151-428
Mfr. Part No.:
STB11NK40ZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

400V

Series

SuperMESH

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.55Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

15.85mm

Width

10.4mm

Height

4.6mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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