STMicroelectronics STN Type N-Channel MOSFET, 1 A, 200 V Enhancement, 4-Pin SOT-223 STN4NF20L
- RS stock no.:
- 151-425
- Mfr. Part No.:
- STN4NF20L
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 tape of 20 units)*
R 123,10
(exc. VAT)
R 141,56
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,200 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | R 6.155 | R 123.10 |
| 200 - 480 | R 6.001 | R 120.02 |
| 500 - 980 | R 5.821 | R 116.42 |
| 1000 - 1980 | R 5.588 | R 111.76 |
| 2000 + | R 5.365 | R 107.30 |
*price indicative
- RS stock no.:
- 151-425
- Mfr. Part No.:
- STN4NF20L
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | STN | |
| Package Type | SOT-223 | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series STN | ||
Package Type SOT-223 | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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