STMicroelectronics MDmesh II Type N-Channel MOSFET, 2.2 A, 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 tape of 10 units)*

R 119,16

(exc. VAT)

R 137,03

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 5,940 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tape*
10 - 90R 11.916R 119.16
100 - 240R 11.618R 116.18
250 - 490R 11.269R 112.69
500 - 990R 10.818R 108.18
1000 +R 10.385R 103.85

*price indicative

Packaging Options:
RS stock no.:
151-423
Mfr. Part No.:
STL3NM60N
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

600V

Series

MDmesh II

Package Type

PowerFLAT (3.3 x 3.3) HV

Pin Count

8

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

22W

Typical Gate Charge Qg @ Vgs

9.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MY
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance. It is therefore suitable for the most demanding high efficiency converters.

100% avalanche tested

Low input capacitance and gate charge

Related links