Toshiba 2SK209-GR(TE85L,F), Junction Type N-Channel Audio Frequency Low Noise Amplifier-Channel Transistor, 10 V 14 mA,
- RS stock no.:
- 236-3556P
- Mfr. Part No.:
- 2SK209-GR(TE85L,F)
- Manufacturer:
- Toshiba
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Bulk discount available
View bulk pricing optionsSubtotal 50 units (supplied on a continuous strip)*
R 362,35
(exc. VAT)
R 416,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,725 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 75 | R 7.247 |
| 100 - 225 | R 7.029 |
| 250 - 975 | R 6.748 |
| 1000 + | R 6.478 |
*price indicative
- RS stock no.:
- 236-3556P
- Mfr. Part No.:
- 2SK209-GR(TE85L,F)
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | Transistor | |
| Sub Type | Audio Frequency Low Noise Amplifier | |
| Channel Type | N | |
| Maximum Drain Source Voltage Vds | 10V | |
| Configuration | Junction Type | |
| Package Type | S-MINI | |
| Maximum Gate Source Voltage Vgs | -50V | |
| Minimum Operating Temperature | 25°C | |
| Drain Source Current Ids | 14 mA | |
| Pin Count | 3 | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Series | 2SK209 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type Transistor | ||
Sub Type Audio Frequency Low Noise Amplifier | ||
Channel Type N | ||
Maximum Drain Source Voltage Vds 10V | ||
Configuration Junction Type | ||
Package Type S-MINI | ||
Maximum Gate Source Voltage Vgs -50V | ||
Minimum Operating Temperature 25°C | ||
Drain Source Current Ids 14 mA | ||
Pin Count 3 | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Series 2SK209 | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having N channel junction type. It is mainly used in audio frequency low noise amplifier applications.
Low noise
Small package