Fairchild ISL9V5036S3ST IGBT, 46 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS stock no.:
- 862-9362
- Mfr. Part No.:
- ISL9V5036S3ST
- Manufacturer:
- Fairchild Semiconductor
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Subtotal (1 pack of 5 units)*
R 413,87
(exc. VAT)
R 475,95
(inc. VAT)
Add 20 units to get free delivery
Temporarily out of stock
- 800 unit(s) shipping from 02 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | R 82.774 | R 413.87 |
*price indicative
- RS stock no.:
- 862-9362
- Mfr. Part No.:
- ISL9V5036S3ST
- Manufacturer:
- Fairchild Semiconductor
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fairchild Semiconductor | |
| Maximum Continuous Collector Current | 46 A | |
| Maximum Collector Emitter Voltage | 420 V | |
| Maximum Gate Emitter Voltage | ±14V | |
| Maximum Power Dissipation | 250 W | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.67 x 9.65 x 4.83mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand Fairchild Semiconductor | ||
Maximum Continuous Collector Current 46 A | ||
Maximum Collector Emitter Voltage 420 V | ||
Maximum Gate Emitter Voltage ±14V | ||
Maximum Power Dissipation 250 W | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.67 x 9.65 x 4.83mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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