STMicroelectronics STGWT30H60DFB, Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-3P, Through Hole
- RS stock no.:
- 860-7325
- Mfr. Part No.:
- STGWT30H60DFB
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 84,81
(exc. VAT)
R 97,532
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- Plus 4 left, shipping from 13 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 42.405 | R 84.81 |
| 20 - 48 | R 41.345 | R 82.69 |
| 50 - 98 | R 40.105 | R 80.21 |
| 100 - 248 | R 38.50 | R 77.00 |
| 250 + | R 36.96 | R 73.92 |
*price indicative
- RS stock no.:
- 860-7325
- Mfr. Part No.:
- STGWT30H60DFB
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | HB | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series HB | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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