STMicroelectronics STGWT30H60DFB IGBT, 60 A 600 V, 3-Pin TO-3P, Through Hole

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Subtotal (1 pack of 2 units)*

R 150,64

(exc. VAT)

R 173,24

(inc. VAT)

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Limited stock
  • Plus 18 left, shipping from 05 January 2026
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Units
Per unit
Per Pack*
2 - 18R 75.32R 150.64
20 - 48R 73.435R 146.87
50 - 98R 71.23R 142.46
100 - 248R 68.38R 136.76
250 +R 65.645R 131.29

*price indicative

Packaging Options:
RS stock no.:
860-7325
Mfr. Part No.:
STGWT30H60DFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

260 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 14.1mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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