STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

R 482,76

(exc. VAT)

R 555,175

(inc. VAT)

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  • 25 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45R 96.552R 482.76
50 - 145R 94.138R 470.69
150 - 295R 91.314R 456.57
300 - 595R 87.662R 438.31
600 +R 84.156R 420.78

*price indicative

Packaging Options:
RS stock no.:
791-7643
Mfr. Part No.:
STGW60V60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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