IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264, Through Hole
- RS stock no.:
- 808-0237
- Mfr. Part No.:
- IXYB82N120C3H1
- Manufacturer:
- IXYS
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Bulk discount available
Subtotal (1 unit)*
R 471,00
(exc. VAT)
R 541,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 25 unit(s) shipping from 29 December 2025
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Units | Per unit |
|---|---|
| 1 - 4 | R 471.00 |
| 5 - 9 | R 459.23 |
| 10 - 24 | R 445.45 |
| 25 - 49 | R 427.63 |
| 50 + | R 410.52 |
*price indicative
- RS stock no.:
- 808-0237
- Mfr. Part No.:
- IXYB82N120C3H1
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 164 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 1040 W | |
| Package Type | PLUS264 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Transistor Configuration | Single | |
| Dimensions | 20.29 x 5.31 x 26.59mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 164 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 1040 W | ||
Package Type PLUS264 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Transistor Configuration Single | ||
Dimensions 20.29 x 5.31 x 26.59mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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