onsemi ISL9V3040D3ST, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface
- RS stock no.:
- 807-8758
- Mfr. Part No.:
- ISL9V3040D3ST
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 215,50
(exc. VAT)
R 247,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Supply shortage
- 5 left, ready to ship from another location
- Plus 1,705 left, shipping from 08 June 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 43.10 | R 215.50 |
| 25 - 45 | R 42.022 | R 210.11 |
| 50 - 245 | R 40.762 | R 203.81 |
| 250 - 495 | R 39.132 | R 195.66 |
| 500 + | R 37.566 | R 187.83 |
*price indicative
- RS stock no.:
- 807-8758
- Mfr. Part No.:
- ISL9V3040D3ST
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 21A | |
| Product Type | Ignition IGBT | |
| Maximum Collector Emitter Voltage Vceo | 430V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | ±10 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | EcoSPARK | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 300mJ | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 21A | ||
Product Type Ignition IGBT | ||
Maximum Collector Emitter Voltage Vceo 430V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO ±10 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series EcoSPARK | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 300mJ | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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