onsemi ISL9V3040D3ST, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface

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Subtotal (1 pack of 5 units)*

R 265,18

(exc. VAT)

R 304,955

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
Supply shortage
  • Plus 15 left, shipping from 23 February 2026
  • Plus 1,735 left, shipping from 02 March 2026
Our current stock is limited and our suppliers are expecting shortages.
Units
Per unit
Per Pack*
5 - 20R 53.036R 265.18
25 - 45R 51.71R 258.55
50 - 245R 50.158R 250.79
250 - 495R 48.152R 240.76
500 +R 46.226R 231.13

*price indicative

Packaging Options:
RS stock no.:
807-8758
Mfr. Part No.:
ISL9V3040D3ST
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

21A

Product Type

Ignition IGBT

Maximum Collector Emitter Voltage Vceo

430V

Maximum Power Dissipation Pd

150W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.2V

Maximum Gate Emitter Voltage VGEO

±10 V

Maximum Operating Temperature

175°C

Series

EcoSPARK

Standards/Approvals

RoHS

Energy Rating

300mJ

Automotive Standard

AEC-Q101

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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