STMicroelectronics STGW39NC60VD, Type N-Channel IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 795-9209
- Mfr. Part No.:
- STGW39NC60VD
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 160,00
(exc. VAT)
R 184,00
(inc. VAT)
Add 22 units to get free delivery
In Stock
- 354 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 2 | R 80.00 | R 160.00 |
| 4 - 8 | R 78.00 | R 156.00 |
| 10 - 18 | R 75.66 | R 151.32 |
| 20 - 48 | R 72.635 | R 145.27 |
| 50 + | R 69.73 | R 139.46 |
*price indicative
- RS stock no.:
- 795-9209
- Mfr. Part No.:
- STGW39NC60VD
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC JESD97 | |
| Height | 20.15mm | |
| Width | 15.75 mm | |
| Length | 14.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC JESD97 | ||
Height 20.15mm | ||
Width 15.75 mm | ||
Length 14.8mm | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- STMicroelectronics STGW39NC60VD IGBT 3-Pin TO-247, Through Hole
- onsemi FGH40N60SMD IGBT 3-Pin TO-247, Through Hole
- Infineon IKW75N60TFKSA1 IGBT 3-Pin TO-247, Through Hole
- onsemi FGH40N60UFDTU IGBT 3-Pin TO-247, Through Hole
- Infineon IKW40N60H3FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW50N60DTPXKSA1 IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGW40H60DLFB IGBT 3-Pin TO-247, Through Hole
- onsemi FGH40N60SFDTU IGBT 3-Pin TO-247, Through Hole