STMicroelectronics STGW30NC120HD, Type N-Channel IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal 10 units (supplied in a tube)*

R 700,95

(exc. VAT)

R 806,09

(inc. VAT)

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Units
Per unit
10 - 98R 70.095
100 - 248R 67.99
250 - 998R 65.27
1000 +R 62.66

*price indicative

Packaging Options:
RS stock no.:
795-9136P
Mfr. Part No.:
STGW30NC120HD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

220W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.75V

Maximum Gate Emitter Voltage VGEO

±25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

14.8mm

Standards/Approvals

ECOPACK, JEDEC JESD97

Height

20.15mm

Width

15.75 mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.