Infineon, Type N-Channel IGBT, 153 A 25 V, 8-Pin PG-TDSON-8, Through Hole
- RS stock no.:
- 273-5234
- Mfr. Part No.:
- BSC018NE2LSATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 68,03
(exc. VAT)
R 78,235
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 95 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 13.606 | R 68.03 |
| 50 - 495 | R 13.266 | R 66.33 |
| 500 - 995 | R 12.868 | R 64.34 |
| 1000 - 2495 | R 12.354 | R 61.77 |
| 2500 + | R 11.86 | R 59.30 |
*price indicative
- RS stock no.:
- 273-5234
- Mfr. Part No.:
- BSC018NE2LSATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 153A | |
| Maximum Collector Emitter Voltage Vceo | 25V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Number of Transistors | 1 | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21 | |
| Height | 1.51mm | |
| Length | 5.1mm | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 153A | ||
Maximum Collector Emitter Voltage Vceo 25V | ||
Maximum Power Dissipation Pd 2.5W | ||
Number of Transistors 1 | ||
Package Type PG-TDSON-8 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21 | ||
Height 1.51mm | ||
Length 5.1mm | ||
Width 6.1 mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a 25 V N channel MOSFET. It is optimized for high performance buck converter. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.
RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
100 percent avalanche tested
Related links
- Infineon BSC018NE2LSATMA1 IGBT 8-Pin PG-TDSON-8, Through Hole
- Infineon BSC16DN25NS3GATMA1 IGBT Through Hole
- Infineon OptiMOSTM5 N-Channel MOSFET 60 V, 8-Pin PG-TDSON-8 FL ISC015N06NM5LF2ATMA1
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN10S5L280DATMA1
- Infineon ISC Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-TDSON-8 ISC046N13NM6ATMA1
- Infineon IAUCN04S7L011 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7L011ATMA1
- Infineon ISC Type N-Channel OptiMOST Power-MOSFET 30 V Enhancement, 8-Pin PG-TDSON-8
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N015ATMA1