Infineon BSC018NE2LSATMA1 IGBT, 153 A 25 V, 8-Pin PG-TDSON-8, Through Hole
- RS stock no.:
- 273-5234
- Mfr. Part No.:
- BSC018NE2LSATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
R 69,06
(exc. VAT)
R 79,42
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 95 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 13.812 | R 69.06 |
| 50 - 495 | R 13.466 | R 67.33 |
| 500 - 995 | R 13.062 | R 65.31 |
| 1000 - 2495 | R 12.54 | R 62.70 |
| 2500 + | R 12.038 | R 60.19 |
*price indicative
- RS stock no.:
- 273-5234
- Mfr. Part No.:
- BSC018NE2LSATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 153 A | |
| Maximum Collector Emitter Voltage | 25 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 2.5 W | |
| Package Type | PG-TDSON-8 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 8 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 153 A | ||
Maximum Collector Emitter Voltage 25 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 2.5 W | ||
Package Type PG-TDSON-8 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 8 | ||
The Infineon MOSFET is a 25 V N channel MOSFET. It is optimized for high performance buck converter. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.
RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
100 percent avalanche tested
Pb free lead plating
Very low on resistance
Superior thermal resistance
100 percent avalanche tested
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