STMicroelectronics STGSB200M65DF2AG, NPN-Channel Single IGBT, 216 A 650 V, 9-Pin ECOPACK, Surface

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Subtotal (1 reel of 200 units)*

R 55 591,40

(exc. VAT)

R 63 930,20

(inc. VAT)

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Units
Per unit
Per Reel*
200 - 200R 277.957R 55,591.40
400 - 400R 271.008R 54,201.60
600 +R 262.878R 52,575.60

*price indicative

RS stock no.:
273-5093
Mfr. Part No.:
STGSB200M65DF2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

216A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

714W

Number of Transistors

2

Package Type

ECOPACK

Configuration

Single

Mount Type

Surface

Channel Type

NPN

Pin Count

9

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.05V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

4mm

Standards/Approvals

UL1557

Height

5.5mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Tight parameter distribution

Low thermal resistance

Dice on direct bond copper (DBC) substrate

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