Infineon, Type N-Channel IGBT, 12 A 600 V, 3-Pin TO-263, Through Hole

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Subtotal (1 pack of 2 units)*

R 66,14

(exc. VAT)

R 76,06

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 33.07R 66.14
50 - 98R 32.245R 64.49
100 - 248R 31.28R 62.56
250 - 498R 30.03R 60.06
500 +R 28.83R 57.66

*price indicative

RS stock no.:
273-2968
Mfr. Part No.:
IKB06N60TATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

12A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

88W

Package Type

TO-263

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

2.05V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-free lead plating, J-STD-020, RoHS, JEDEC, JESD-022

Series

TrenchStop

Height

4.57mm

Length

9.45mm

Automotive Standard

No

The Infineon IGBT3 compacted with full-rated free-wheeling diode in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of

High ruggedness and temperature stable behaviour

Very tight parameter distribution

High device reliability

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