Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount

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Subtotal (1 unit)*

R 1 940,04

(exc. VAT)

R 2 231,05

(inc. VAT)

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  • Shipping from 10 December 2027
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Units
Per unit
1 - 4R 1,940.04
5 - 9R 1,891.54
10 - 49R 1,834.79
50 +R 1,761.40

*price indicative

Packaging Options:
RS stock no.:
260-8888
Mfr. Part No.:
FF50R12RT4HOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

285 W

Number of Transistors

2

Package Type

AG-34MM

Configuration

Dual

Mounting Type

Chassis Mount

The infineon dual IGBT module is 34 mm 1200 V, 50 A fast TRENCHSTOP IGBT4 and emitter controlled 4 diode. VCEsat with positive temperature coefficient, it is flexibility, optimal electrical performance and highest reliability.

Extended operation temperature
Low switching losses
Low VCEsat
Isolated base plate
Standard housing

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