Infineon Dual IGBT, 50 A 1200 V AG-34MM, Chassis

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Bulk discount available

Subtotal (1 tray of 10 units)*

R 13 350,91

(exc. VAT)

R 15 353,55

(inc. VAT)

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Units
Per unit
Per Tray*
10 - 40R 1,335.091R 13,350.91
50 +R 1,301.714R 13,017.14

*price indicative

RS stock no.:
260-8887
Mfr. Part No.:
FF50R12RT4HOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

50A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

2

Maximum Power Dissipation Pd

285W

Configuration

Dual

Package Type

AG-34MM

Mount Type

Chassis

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The infineon dual IGBT module is 34 mm 1200 V, 50 A fast TRENCHSTOP IGBT4 and emitter controlled 4 diode. VCEsat with positive temperature coefficient, it is flexibility, optimal electrical performance and highest reliability.

Extended operation temperature

Low switching losses

Low VCEsat

Isolated base plate

Standard housing

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