Infineon IGBT Module 650 V, Through Hole

RS stock no.:: 248-1201
Mfr. Part No.:: F3L150R07W2H3B11BPSA1
Manufacturer:: Infineon

Infineon IGBT Module 650 V, Through Hole

Image representative of range

Bulk discount available

Subtotal (1 tray of 15 units)*

R 13 158,585

(exc. VAT)

R 15 132,375

(inc. VAT)

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Units	Per unit	Per Tray*
15 - 15	R 877.239	R 13,158.59
30 - 30	R 855.308	R 12,829.62
45 +	R 829.649	R 12,444.74

*price indicative

RS stock no.:: 248-1201
Mfr. Part No.:: F3L150R07W2H3B11BPSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	650V
	Number of Transistors	4
	Maximum Power Dissipation Pd	20mW
	Mount Type	Through Hole
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Maximum Operating Temperature	150°C
	Width	48 mm
	Length	56.7mm
	Height	12mm
	Standards/Approvals	RoHS
	Series	F3L150R07W2H3B11
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 650V
	Number of Transistors 4
	Maximum Power Dissipation Pd 20mW
	Mount Type Through Hole
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Maximum Operating Temperature 150°C
	Width 48 mm
	Length 56.7mm
	Height 12mm
	Standards/Approvals RoHS
	Series F3L150R07W2H3B11
	Automotive Standard No

Datasheet - F3L150R07W2H3B11BPSA1

The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device uses IGBT HighSpeed 3 technology.

Best cost-performance ratio with reduced system costs

High degree of freedom in design

Highest efficiency and power density

Infineon IGBT Module 650 V, Through Hole

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