Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130

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Subtotal 2 units (supplied in a tray)*

R 44 198,50

(exc. VAT)

R 50 828,28

(inc. VAT)

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2 +R 22,099.25

*price indicative

Packaging Options:
RS stock no.:
236-5199P
Mfr. Part No.:
FZ825R33HE4DBPSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

825 A

Maximum Collector Emitter Voltage

3300 V

Maximum Power Dissipation

2400 kW

Number of Transistors

2

Package Type

AG-IHVB130

Configuration

Single

The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.

VCES is 3300 V
IC nom is 825 A
ICRM is 1650 A
It retains high current density

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