Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM

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Subtotal (1 unit)*

R 4 178,31

(exc. VAT)

R 4 805,06

(inc. VAT)

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  • 4 unit(s) ready to ship from another location
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Units
Per unit
1 - 1R 4,178.31
2 - 2R 4,073.85
3 - 3R 3,951.63
4 - 4R 3,793.56
5 +R 3,641.82

*price indicative

Packaging Options:
RS stock no.:
233-3498
Mfr. Part No.:
FF600R12KT4HOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

600 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Package Type

AG-62MM

Configuration

Dual

Channel Type

N

Transistor Configuration

Series

The Infineon dual fast trench IGBT module with TRENCHSTOP IGBT4 and Emitter Controlled 4 diode.

Highest power density
Flexibility
Optimal electrical performance
Highest reliability

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