Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

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Subtotal (1 unit)*

R 5 330,31

(exc. VAT)

R 6 129,86

(inc. VAT)

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  • Shipping from 10 January 2028
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Units
Per unit
1 - 9R 5,330.31
10 - 99R 5,197.05
100 - 249R 5,041.14
250 - 499R 4,839.49
500 +R 4,645.91

*price indicative

Packaging Options:
RS stock no.:
222-4798
Mfr. Part No.:
FF900R12ME7B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

900 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

20 mW

Configuration

Dual

Package Type

AG-ECONOD

Channel Type

N

Transistor Configuration

Common Emitter

The Infineon EconoDUAL™ 3 1200 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Also available with pre-applied Thermal Interface Material.

Highest power density
Best-in-class VCE sat
Tvj op = 175°C overload
Improved terminals
Optimized creepage distance for 1500 V PV applications

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