Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD
- RS stock no.:
- 222-4797
- Mfr. Part No.:
- FF900R12ME7B11BOSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tray of 6 units)*
R 32 893,548
(exc. VAT)
R 37 827,582
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 25 November 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 6 - 6 | R 5,482.258 | R 32,893.55 |
| 12 - 12 | R 5,345.202 | R 32,071.21 |
| 18 + | R 5,184.845 | R 31,109.07 |
*price indicative
- RS stock no.:
- 222-4797
- Mfr. Part No.:
- FF900R12ME7B11BOSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 900 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 20 mW | |
| Package Type | AG-ECONOD | |
| Configuration | Dual | |
| Channel Type | N | |
| Transistor Configuration | Common Emitter | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 900 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 20 mW | ||
Package Type AG-ECONOD | ||
Configuration Dual | ||
Channel Type N | ||
Transistor Configuration Common Emitter | ||
The Infineon EconoDUAL™ 3 1200 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Also available with pre-applied Thermal Interface Material.
Highest power density
Best-in-class VCE sat
Tvj op = 175°C overload
Improved terminals
Optimized creepage distance for 1500 V PV applications
Best-in-class VCE sat
Tvj op = 175°C overload
Improved terminals
Optimized creepage distance for 1500 V PV applications
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