Infineon IHW30N135R5XKSA1, Type N-Channel IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 218-4397
- Mfr. Part No.:
- IHW30N135R5XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 316,42
(exc. VAT)
R 363,885
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 195 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 63.284 | R 316.42 |
| 10 - 95 | R 61.702 | R 308.51 |
| 100 - 245 | R 59.85 | R 299.25 |
| 250 - 495 | R 57.456 | R 287.28 |
| 500 + | R 55.158 | R 275.79 |
*price indicative
- RS stock no.:
- 218-4397
- Mfr. Part No.:
- IHW30N135R5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 330W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | IHW30N135R5 | |
| Standards/Approvals | JESD-022 | |
| Width | 16.13 mm | |
| Length | 21.1mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 330W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series IHW30N135R5 | ||
Standards/Approvals JESD-022 | ||
Width 16.13 mm | ||
Length 21.1mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon IHW series reverse conducting IGBT with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking. It has collector emitter voltage of 1350 V and 30 A of collector current.
Increased switching frequency
Lowest power dissipation
Better thermal management for higher reliability
Lower EMI filtering requirements
Reduced system costs
Highest reliability against peak current
Related links
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