Infineon IHW20N135R5XKSA1 IGBT, 40 A 1350 V, 3-Pin PG-TO247-3

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Subtotal (1 pack of 5 units)*

R 348,78

(exc. VAT)

R 401,095

(inc. VAT)

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  • 25 unit(s) ready to ship from another location
  • Plus 215 unit(s) shipping from 25 February 2026
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Units
Per unit
Per Pack*
5 - 5R 69.756R 348.78
10 - 95R 68.012R 340.06
100 - 245R 65.972R 329.86
250 - 495R 63.334R 316.67
500 +R 60.80R 304.00

*price indicative

Packaging Options:
RS stock no.:
215-6636
Mfr. Part No.:
IHW20N135R5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

1350 V

Maximum Gate Emitter Voltage

±20 V, ±25 V

Maximum Power Dissipation

310 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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