Infineon IHW20N135R5XKSA1, Type N-Channel IGBT Single Transistor IC, 40 A 1350 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 215-6636
- Mfr. Part No.:
- IHW20N135R5XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 303,42
(exc. VAT)
R 348,935
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 25 unit(s) ready to ship from another location
- Plus 215 unit(s) shipping from 20 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 60.684 | R 303.42 |
| 10 - 95 | R 59.166 | R 295.83 |
| 100 - 245 | R 57.392 | R 286.96 |
| 250 - 495 | R 55.096 | R 275.48 |
| 500 + | R 52.892 | R 264.46 |
*price indicative
- RS stock no.:
- 215-6636
- Mfr. Part No.:
- IHW20N135R5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 310W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Length | 42mm | |
| Series | Resonant Switching | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 310W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Length 42mm | ||
Series Resonant Switching | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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