Infineon IKQ100N60TXKSA1, Type N-Channel IGBT, 160 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 unit)*

R 155,08

(exc. VAT)

R 178,34

(inc. VAT)

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Units
Per unit
1 - 9R 155.08
10 - 99R 151.20
100 - 249R 146.66
250 - 499R 140.79
500 +R 135.16

*price indicative

Packaging Options:
RS stock no.:
215-6665
Mfr. Part No.:
IKQ100N60TXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

160A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

714W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Maximum Operating Temperature

175°C

Length

41.2mm

Series

TrenchStop

Standards/Approvals

No

Height

5.1mm

Automotive Standard

No

The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage has fast recovery anti-parallel emitter controlled diode.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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