STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

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R 271,66

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R 312,40

(inc. VAT)

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Per unit
Per Pack*
2 - 8R 135.83R 271.66
10 +R 132.435R 264.87

*price indicative

Packaging Options:
RS stock no.:
212-2107
Mfr. Part No.:
STGW100H65FB2-4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

145 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

441 W

Package Type

TO247-4

Channel Type

N

Pin Count

4

Transistor Configuration

Single

IGBT


The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.

Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

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