IXYS IXYN30N170CV1 Dual Emitter IGBT Module, 270 A 1700 V, 4-Pin SOT-227B, Surface Mount
- RS stock no.:
- 146-4251
- Mfr. Part No.:
- IXYN30N170CV1
- Manufacturer:
- IXYS
Bulk discount available
Subtotal (1 tube of 10 units)*
R 8 408,31
(exc. VAT)
R 9 669,56
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 30 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 40 | R 840.831 | R 8,408.31 |
| 50 - 90 | R 819.81 | R 8,198.10 |
| 100 - 240 | R 795.216 | R 7,952.16 |
| 250 - 490 | R 763.407 | R 7,634.07 |
| 500 + | R 732.871 | R 7,328.71 |
*price indicative
- RS stock no.:
- 146-4251
- Mfr. Part No.:
- IXYN30N170CV1
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 270 A | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 680 W | |
| Package Type | SOT-227B | |
| Configuration | Dual Emitter | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 4 | |
| Transistor Configuration | Single | |
| Dimensions | 38.23 x 25.42 x 9.6mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 270 A | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 680 W | ||
Package Type SOT-227B | ||
Configuration Dual Emitter | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 4 | ||
Transistor Configuration Single | ||
Dimensions 38.23 x 25.42 x 9.6mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Thin wafer XPT™ technology
Low on-state voltages VCE(sat)
Co-packed fast recovery diodes
Positive temperature coefficient of VCE(sat)
International standard size high-voltage packages
Higher efficiency
Elimination of multiple series-connected devices
Increased reliability of power systems
Pulser circuits
Laser and X-ray generators
High-voltage power supplies
High-voltage test equipment
Capacitor discharge circuits
AC switches
Low on-state voltages VCE(sat)
Co-packed fast recovery diodes
Positive temperature coefficient of VCE(sat)
International standard size high-voltage packages
Higher efficiency
Elimination of multiple series-connected devices
Increased reliability of power systems
Pulser circuits
Laser and X-ray generators
High-voltage power supplies
High-voltage test equipment
Capacitor discharge circuits
AC switches
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