Infineon IRGSL4B60KD1PBF IGBT, 11 A 600 V, 3-Pin I2PAK (TO-262), Through Hole
- RS stock no.:
- 145-8683
- Mfr. Part No.:
- IRGSL4B60KD1PBF
- Manufacturer:
- Infineon
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- RS stock no.:
- 145-8683
- Mfr. Part No.:
- IRGSL4B60KD1PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 11 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 63 W | |
| Package Type | I2PAK (TO-262) | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 8 → 30kHz | |
| Transistor Configuration | Single | |
| Dimensions | 10.8 x 4.8 x 11.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 11 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 63 W | ||
Package Type I2PAK (TO-262) | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 8 → 30kHz | ||
Transistor Configuration Single | ||
Dimensions 10.8 x 4.8 x 11.3mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- MX
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