Starpower DG75A08TDFS IGBT Discrete, 100 A 750 V, 4-Pin TO-247PLUS-4L
- RS stock no.:
- 427-738
- Mfr. Part No.:
- DG75A08TDFS
- Manufacturer:
- Starpower
Bulk discount available
Subtotal (1 pack of 2 units)*
R 141,72
(exc. VAT)
R 162,98
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 30 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 70.86 | R 141.72 |
| 20 - 198 | R 69.09 | R 138.18 |
| 200 - 998 | R 67.015 | R 134.03 |
| 1000 - 1998 | R 64.335 | R 128.67 |
| 2000 + | R 61.76 | R 123.52 |
*price indicative
- RS stock no.:
- 427-738
- Mfr. Part No.:
- DG75A08TDFS
- Manufacturer:
- Starpower
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Starpower | |
| Maximum Continuous Collector Current Ic | 100A | |
| Product Type | IGBT Discrete | |
| Maximum Collector Emitter Voltage Vceo | 750V | |
| Maximum Power Dissipation Pd | 378W | |
| Package Type | TO-247PLUS-4L | |
| Pin Count | 4 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | DOSEMI | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Starpower | ||
Maximum Continuous Collector Current Ic 100A | ||
Product Type IGBT Discrete | ||
Maximum Collector Emitter Voltage Vceo 750V | ||
Maximum Power Dissipation Pd 378W | ||
Package Type TO-247PLUS-4L | ||
Pin Count 4 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series DOSEMI | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower IGBT Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as solar power.
Low switching loss
Maximum junction temperature 175°C
VCE(sat) with positive temperature coefficient
Fast and soft reverse recovery anti parallel FWD
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