onsemi NFAM3065L4BL, Type N-Channel 3 Phase IGBT, 30 A 650 V, 39-Pin DIP-39, Through Hole

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R 718,86

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R 826,69

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1 - 9R 718.86
10 - 99R 700.89
100 +R 679.86

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Packaging Options:
RS stock no.:
277-038
Mfr. Part No.:
NFAM3065L4BL
Manufacturer:
onsemi
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Brand

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

113W

Number of Transistors

6

Configuration

3 Phase

Package Type

DIP-39

Mount Type

Through Hole

Channel Type

Type N

Pin Count

39

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Operating Temperature

150°C

Standards/Approvals

Pb-Free, UL1557 (File No.339285), RoHS

Height

5.6mm

Length

54.5mm

Width

31 mm

Automotive Standard

No

COO (Country of Origin):
VN
The ON Semiconductor Integrated Inverter Power Module features a high-side gate driver, LVIC, six IGBTs, and a temperature sensor (VTS), making it ideal for driving PMSM, BLDC, and AC asynchronous motors. The IGBTs are arranged in a three-phase bridge with separate emitter connections for the lower legs, allowing maximum flexibility in control algorithm selection.

Active logic interface

Built in undervoltage protection

Integrated bootstrap diodes and resistors

Separate low side IGBT emitter connections for individual current sensing of each phase

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