IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount

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Subtotal (1 unit)*

R 1 496,14

(exc. VAT)

R 1 720,56

(inc. VAT)

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Units
Per unit
1 - 4R 1,496.14
5 - 9R 1,458.74
10 - 19R 1,414.98
20 - 49R 1,358.38
50 +R 1,304.04

*price indicative

RS stock no.:
193-874
Mfr. Part No.:
MII100-12A3
Manufacturer:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current

135 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y4 M5

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

IGBT Modules, IXYS



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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