Infineon IR2118PBF, Gate Driver 1, 500 mA 8-Pin 20 V, PDIP
- RS stock no.:
- 262-6233
- Distrelec Article No.:
- 304-41-660
- Mfr. Part No.:
- IR2118PBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 78,84
(exc. VAT)
R 90,66
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,872 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 39.42 | R 78.84 |
| 50 - 98 | R 38.435 | R 76.87 |
| 100 - 248 | R 37.28 | R 74.56 |
| 250 - 998 | R 35.79 | R 71.58 |
| 1000 + | R 34.36 | R 68.72 |
*price indicative
- RS stock no.:
- 262-6233
- Distrelec Article No.:
- 304-41-660
- Mfr. Part No.:
- IR2118PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 500mA | |
| Pin Count | 8 | |
| Fall Time | 90ns | |
| Package Type | PDIP | |
| Driver Type | Gate Driver | |
| Rise Time | 80ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver Module | ||
Output Current 500mA | ||
Pin Count 8 | ||
Fall Time 90ns | ||
Package Type PDIP | ||
Driver Type Gate Driver | ||
Rise Time 80ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon single channel driver is a high voltage, high speed power MOSFET and IGBT driver. The floating channel can be used to drive an N channel power MOSFET or IGBT in the high or low side configuration.
Under voltage lockout for both channe
Matched propagation delay for both channels
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