Infineon 2ED21091S06FXUMA1, Gate Driver 2, 290 mA 8-Pin 20 V, DSO-8
- RS stock no.:
- 258-0606
- Mfr. Part No.:
- 2ED21091S06FXUMA1
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 pack of 2 units)*
R 39,59
(exc. VAT)
R 45,528
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,406 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 19.795 | R 39.59 |
| 10 - 98 | R 19.30 | R 38.60 |
| 100 - 248 | R 18.72 | R 37.44 |
| 250 - 498 | R 17.97 | R 35.94 |
| 500 + | R 17.25 | R 34.50 |
*price indicative
- RS stock no.:
- 258-0606
- Mfr. Part No.:
- 2ED21091S06FXUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Fall Time | 35ns | |
| Package Type | DSO-8 | |
| Driver Type | Gate Driver | |
| Rise Time | 100ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | 2ED21091S6F | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver | ||
Output Current 290mA | ||
Pin Count 8 | ||
Fall Time 35ns | ||
Package Type DSO-8 | ||
Driver Type Gate Driver | ||
Rise Time 100ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series 2ED21091S6F | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
The dual function DT/SD input turns off both channels
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