ROHM BD2320EFJ-LAE2 MOSFET Gate Driver, 4.5 A 32 V, HTSOP-J8

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Subtotal (1 pack of 2 units)*

R 75,17

(exc. VAT)

R 86,446

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • 82 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 48R 37.585R 75.17
50 - 98R 36.645R 73.29
100 - 248R 35.545R 71.09
250 - 998R 34.125R 68.25
1000 +R 32.76R 65.52

*price indicative

Packaging Options:
RS stock no.:
255-7660
Mfr. Part No.:
BD2320EFJ-LAE2
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Output Current

4.5A

Fall Time

6ns

Package Type

HTSOP-J8

Driver Type

MOSFET

Minimum Supply Voltage

32V

Maximum Supply Voltage

32V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Series

BD2320E

Mount Type

PCB

Automotive Standard

No

The ROHM High frequency high-side and low-side driver is 100 V maximum voltage high-side and low-side gate drivers which can drive external Nch-FET using the bootstrap method. The driver includes a 100 V bootstrap diode and independent inputs control for high-side and low-side. 3.3 V and 5.0 V are available for interface voltage. Under voltage lockout circuits are built in for high-side and low-side.

Long time support product for industrial applications

Under Voltage Lockout (UVLO) for high-side and low-side driver

3.3 V and 5.0 V interface voltage

Output In-phase with input signal

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