DiodesZetex 2, 290.69 A 8-Pin 20 V, SOIC
- RS stock no.:
- 246-7488P
- Mfr. Part No.:
- DGD2003S8-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
R 685,15
(exc. VAT)
R 787,90
(inc. VAT)
Add 120 units to get free delivery
Last RS stock
- Final 2,430 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 50 - 90 | R 13.703 |
| 100 - 240 | R 13.292 |
| 250 - 990 | R 12.76 |
| 1000 + | R 12.25 |
*price indicative
- RS stock no.:
- 246-7488P
- Mfr. Part No.:
- DGD2003S8-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Gate Driver Module | |
| Output Current | 290.69A | |
| Pin Count | 8 | |
| Fall Time | 35ns | |
| Package Type | SOIC | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Gate Driver Module | ||
Output Current 290.69A | ||
Pin Count 8 | ||
Fall Time 35ns | ||
Package Type SOIC | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The DiodesZetex makes a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. high voltage processing techniques enable the DGD2003’s high side to switch to 200V in a bootstrap operation. The DGD2003 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The DGD2003 is offered in the SO-8 package and operates over an extended -40°C to +125°C temperature range
Wide low side gate driver supply voltage of 10V to 20V Floating high-side driver in bootstrap operation to 200V Drives 2 N-channel MOSFETs in a half-bridge configuration Under voltage lockout for high-side and low-side drivers Extended temperature range of -40°C to +125°C