onsemi NCD57090BDWR2G, IGBT, 6.5 A 8-Pin 22 V, SOIC
- RS stock no.:
- 221-6598
- Mfr. Part No.:
- NCD57090BDWR2G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 381,30
(exc. VAT)
R 438,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 1,990 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 76.26 | R 381.30 |
| 10 - 95 | R 74.354 | R 371.77 |
| 100 - 245 | R 72.124 | R 360.62 |
| 250 - 495 | R 69.24 | R 346.20 |
| 500 + | R 66.47 | R 332.35 |
*price indicative
- RS stock no.:
- 221-6598
- Mfr. Part No.:
- NCD57090BDWR2G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 6.5A | |
| Pin Count | 8 | |
| Fall Time | 13ns | |
| Package Type | SOIC | |
| Number of Outputs | 5 | |
| Driver Type | IGBT | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 22V | |
| Maximum Supply Voltage | 22V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.75mm | |
| Series | NCD57090 | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Output Current 6.5A | ||
Pin Count 8 | ||
Fall Time 13ns | ||
Package Type SOIC | ||
Number of Outputs 5 | ||
Driver Type IGBT | ||
Rise Time 13ns | ||
Minimum Supply Voltage 22V | ||
Maximum Supply Voltage 22V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.75mm | ||
Series NCD57090 | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCD57090 are high−current single channel IGBT/MOSFET gate driver with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The device accept complementary input and depending on the pin configuration, offer options such as active miller clamp, negative power supply and separate high and low driver output for system design convenience.
High transient immunity
High electromagnetic immunity
Short propagation delays with accurate matching