onsemi NCV57200DR2G Gate Driver 2, 1.9 A 8-Pin 20 V, SOIC

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Subtotal (1 pack of 5 units)*

R 232,67

(exc. VAT)

R 267,57

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 46.534R 232.67
50 - 95R 45.37R 226.85
100 - 495R 44.008R 220.04
500 - 995R 42.248R 211.24
1000 +R 40.558R 202.79

*price indicative

Packaging Options:
RS stock no.:
205-2421
Mfr. Part No.:
NCV57200DR2G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

General Purpose Driver

Output Current

1.9A

Pin Count

8

Package Type

SOIC

Fall Time

8ns

Driver Type

General Purpose

Number of Outputs

2

Rise Time

13ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

20V

Number of Drivers

2

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Height

1.75mm

Standards/Approvals

No

Length

5mm

Width

4 mm

Mount Type

Surface

Automotive Standard

AEC-Q100

The ON Semiconductor high voltage gate driver with one non-isolated low side gate driver and one galvanic isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. An isolated high side driver can be powered with an isolated power supply or with Bootstrap technique from the low side power supply. This galvanic isolation for the high side gate driver guarantees reliable switching in high power applications for IGBTs that operate up to 800 V, at high dv/dt.

Package is SOIC-8 (Pb-Free)

High peak current output (+1.9A/-2.3A)

Low output voltage drop for enhanced IGBT conduction

Secured output low state without VDD/VB

Floating channel for Bootstrap operation up to +800V

CMTI up to 50kV/s

Reliable operation for VS negative swing to -800V

VDD & VBS supply range up to 20V

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