Microchip MCP14A0902T-E/MNYVAO MOSFET Gate Driver 2, 9 A 8-Pin 18 V, TDFN
- RS stock no.:
- 644-283
- Mfr. Part No.:
- MCP14A0902T-E/MNYVAO
- Manufacturer:
- Microchip
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R 75,98
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R 87,38
(inc. VAT)
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | R 37.99 | R 75.98 |
| 20 - 98 | R 37.04 | R 74.08 |
| 100 - 198 | R 35.93 | R 71.86 |
| 200 + | R 34.495 | R 68.99 |
*price indicative
- RS stock no.:
- 644-283
- Mfr. Part No.:
- MCP14A0902T-E/MNYVAO
- Manufacturer:
- Microchip
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Gate Driver | |
| Output Current | 9A | |
| Pin Count | 8 | |
| Fall Time | 22ns | |
| Package Type | TDFN | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 27ns | |
| Minimum Supply Voltage | 18V | |
| Maximum Supply Voltage | 18V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | MCP14A0901/2 | |
| Width | 3 mm | |
| Standards/Approvals | AEC-Q100 | |
| Length | 3mm | |
| Height | 0.85mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Gate Driver | ||
Output Current 9A | ||
Pin Count 8 | ||
Fall Time 22ns | ||
Package Type TDFN | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 27ns | ||
Minimum Supply Voltage 18V | ||
Maximum Supply Voltage 18V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series MCP14A0901/2 | ||
Width 3 mm | ||
Standards/Approvals AEC-Q100 | ||
Length 3mm | ||
Height 0.85mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- TH
The Microchip Dual output high-speed MOSFET gate drivers are capable of providing up to 9 A of peak current while operating from a single 4.5 V to 18 V supply. These devices feature low shoot through current, fast rise and fall times, and short propagation delays which make them ideal for high switching frequency applications. This MOSFET gate drivers devices offer enhanced control with enable functionality.
Low shoot-through/cross-conduction current in output stage
Low supply current of 360 μA
Low-voltage threshold input and enable with hysteresis
Latch-up protected and withstands 0.5 A reverse current
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