Infineon FF1MR12MM1HB11BPSA1 MOSFET Gate Driver 2, 420 A 23 V, AG-ECONOD
- RS stock no.:
- 351-898
- Mfr. Part No.:
- FF1MR12MM1HB11BPSA1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
R 18 620,87
(exc. VAT)
R 21 414,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 10 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | R 18,620.87 |
*price indicative
- RS stock no.:
- 351-898
- Mfr. Part No.:
- FF1MR12MM1HB11BPSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 420A | |
| Fall Time | 77ns | |
| Package Type | AG-ECONOD | |
| Driver Type | MOSFET | |
| Rise Time | 261ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 23V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | FF1MR12MM1H_B11 | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver Module | ||
Output Current 420A | ||
Fall Time 77ns | ||
Package Type AG-ECONOD | ||
Driver Type MOSFET | ||
Rise Time 261ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 23V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series FF1MR12MM1H_B11 | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- HU
The Infineon EconoDUAL 3 CoolSiC MOSFET half bridge module 1200 V, 1.4 mΩ with enhanced generation 1, NTC and Press FIT contact technology. Also available with pre-applied Thermal Interface Material or with wave structure on the backside of the base plate for direct liquid cooling.
Low switching losses
Superior gate oxide reliability
Higher gate threshold voltage
Higher power output
Robust integrated body diode
High cosmic ray robustness
High speed switching module
Screw power terminals
Integrated NTC temperature sensor
Isolated baseplate
Related links
- Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD
- Infineon 2ED300C17STROHSBPSA1 MOSFET Gate Driver 2 16V 45-Pin, AG-EICE
- Infineon IR2133SPBF MOSFET Gate Driver 25V 28-Pin, 28-Lead SOIC
- Infineon IR2111PBF MOSFET Gate Driver 2 20V 8-Pin, PDIP
- Infineon IRS2186PBF MOSFET Gate Driver 2 20V 8-Pin, PDIP
- Infineon IR2113PBF MOSFET Gate Driver 2 20V 14-Pin, PDIP
- Infineon IR21094SPBF MOSFET Gate Driver 2 20V 14-Pin, SOIC
- Infineon IRS2109PBF MOSFET Gate Driver 2 20V 8-Pin, PDIP
