onsemi NCP51752DBDR2G, Isolated Gate Driver 1, 9 A 8-Pin 20 V, SOIC-8
- RS stock no.:
- 277-082
- Mfr. Part No.:
- NCP51752DBDR2G
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tape of 5 units)*
R 250,41
(exc. VAT)
R 287,97
(inc. VAT)
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Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | R 50.082 | R 250.41 |
| 50 - 95 | R 48.83 | R 244.15 |
| 100 - 495 | R 47.366 | R 236.83 |
| 500 - 995 | R 45.472 | R 227.36 |
| 1000 + | R 43.654 | R 218.27 |
*price indicative
- RS stock no.:
- 277-082
- Mfr. Part No.:
- NCP51752DBDR2G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Gate Driver Module | |
| Output Current | 9A | |
| Pin Count | 8 | |
| Package Type | SOIC-8 | |
| Fall Time | 8.3ns | |
| Driver Type | Isolated Gate Driver | |
| Rise Time | 22ns | |
| Minimum Supply Voltage | 3V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Series | NCP51752 | |
| Standards/Approvals | CQC GB4943.1-2011, SGS FIMO IEC 62386-1, UL1577, AEC-Q100-011 | |
| Height | 1.75mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Gate Driver Module | ||
Output Current 9A | ||
Pin Count 8 | ||
Package Type SOIC-8 | ||
Fall Time 8.3ns | ||
Driver Type Isolated Gate Driver | ||
Rise Time 22ns | ||
Minimum Supply Voltage 3V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Series NCP51752 | ||
Standards/Approvals CQC GB4943.1-2011, SGS FIMO IEC 62386-1, UL1577, AEC-Q100-011 | ||
Height 1.75mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Isolated Single Channel Gate Driver is designed for fast switching to drive power MOSFETs and SiC MOSFET power switches. It offers short and matched propagation delays for precise control. To enhance reliability, dV/dt immunity, and achieve even faster turn-off, the driver incorporates an innovative embedded negative bias rail mechanism. This feature improves performance and ensures efficient, high-speed operation in demanding power applications.
Minimum CMTI of 200 V/ns dV/dt
Negative 5−V handling capability on input pins
SGS FIMO certification per IEC 62386−1
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