STMicroelectronics L6385ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17 V, SO-8
- RS stock no.:
- 152-012P
- Mfr. Part No.:
- L6385ED013TR
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
R 977,70
(exc. VAT)
R 1 124,35
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 2,495 unit(s) shipping from 23 February 2026
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Units | Per unit |
|---|---|
| 50 - 95 | R 19.554 |
| 100 - 495 | R 18.968 |
| 500 - 995 | R 18.21 |
| 1000 + | R 17.482 |
*price indicative
- RS stock no.:
- 152-012P
- Mfr. Part No.:
- L6385ED013TR
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 650mA | |
| Pin Count | 8 | |
| Fall Time | 30ns | |
| Package Type | SO-8 | |
| Driver Type | High Side | |
| Number of Outputs | 2 | |
| Rise Time | 50ns | |
| Minimum Supply Voltage | 17V | |
| Maximum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Series | L6385ED013TR | |
| Standards/Approvals | RoHS Compliant | |
| Mount Type | Surface | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 650mA | ||
Pin Count 8 | ||
Fall Time 30ns | ||
Package Type SO-8 | ||
Driver Type High Side | ||
Number of Outputs 2 | ||
Rise Time 50ns | ||
Minimum Supply Voltage 17V | ||
Maximum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Series L6385ED013TR | ||
Standards/Approvals RoHS Compliant | ||
Mount Type Surface | ||
- COO (Country of Origin):
- CN
The STMicroelectronics simple and Compact high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and can be simultaneously driven high in order to drive asymmetrical half bridge configurations.
Undervoltage lockout on lower and upper driving section
Internal bootstrap diode
Outputs in phase with inputs