Infineon 64 kB SPI FRAM 8-Pin DFN, FM25CL64B-DG

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Subtotal 10 units (supplied in a tube)*

R 392,50

(exc. VAT)

R 451,40

(inc. VAT)

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Units
Per unit
10 - 48R 39.25
50 - 98R 38.07
100 - 498R 36.545
500 +R 35.085

*price indicative

Packaging Options:
RS stock no.:
125-4221P
Mfr. Part No.:
FM25CL64B-DG
Manufacturer:
Infineon
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Brand

Infineon

Memory Size

64kB

Product Type

FRAM

Organisation

8K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Mount Type

Surface

Maximum Clock Frequency

20MHz

Package Type

DFN

Pin Count

8

Width

4 mm

Height

0.75mm

Standards/Approvals

No

Length

4.5mm

Maximum Operating Temperature

85°C

Number of Bits per Word

8

Automotive Standard

No

Number of Words

8K

Maximum Supply Voltage

3.65V

Minimum Supply Voltage

2.7V

Minimum Operating Temperature

-40°C

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.