Infineon 1 MB 2 Wire I2C FRAM 8-Pin SOIC, FM24V10-G

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Subtotal 10 units (supplied in a tube)*

R 2 496,70

(exc. VAT)

R 2 871,20

(inc. VAT)

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Units
Per unit
10 - 49R 249.67
50 - 99R 242.18
100 - 499R 232.49
500 +R 223.19

*price indicative

Packaging Options:
RS stock no.:
125-4215P
Mfr. Part No.:
FM24V10-G
Manufacturer:
Infineon
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Brand

Infineon

Memory Size

1MB

Product Type

FRAM

Organisation

128K x 8 bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

450ns

Mount Type

Surface

Maximum Clock Frequency

3.4MHz

Package Type

SOIC

Pin Count

8

Width

3.98 mm

Standards/Approvals

No

Height

1.38mm

Length

4.97mm

Maximum Operating Temperature

85°C

Minimum Supply Voltage

2V

Maximum Supply Voltage

3.6V

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

Automotive Standard

AEC-Q100

Number of Words

128k

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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