Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC, SST39SF040-55-4I-NHE

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Subtotal (1 tube of 30 units)*

R 1 364,40

(exc. VAT)

R 1 569,00

(inc. VAT)

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In Stock
  • 360 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 270R 45.48R 1,364.40
300 - 720R 44.343R 1,330.29
750 - 1470R 43.013R 1,290.39
1500 +R 41.292R 1,238.76

*price indicative

RS stock no.:
165-4121
Mfr. Part No.:
SST39SF040-55-4I-NHE
Manufacturer:
Microchip
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Brand

Microchip

Product Type

Flash Memory

Memory Size

4MB

Interface Type

Parallel

Package Type

PLCC

Pin Count

32

Organisation

512 k x 8 Bit

Mount Type

Surface

Cell Type

Split Gate

Maximum Supply Voltage

5.5V

Minimum Supply Voltage

4.5V

Timing Type

Asynchronous

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Width

349.25 mm

Height

2.79mm

Length

13.97mm

Standards/Approvals

No

Automotive Standard

No

Number of Words

512K

Series

SST39SF040

Supply Current

25mA

Number of Bits per Word

8

Maximum Random Access Time

55ns

COO (Country of Origin):
PH

SST39SF010A/020A/040 Parallel SuperFlash® Memory


The SST39SF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs.

Features


4.5-5.5V Read and Write Operations

Endurance – 100,000 cycles (typical)

Low Power Consumption - Active Current 10 mA, Standby Current 30 μA (typical values at 14 MHz)

Sector-Erase Capability – Uniform 4 Kbyte sectors

Read Access Time – 55 to 70 ns

Sector-Erase Time 18 ms

Chip-Erase Time: 70 ms (typical)

Byte-Program Time – 14 μs (typical)

Chip Rewrite Time – SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040 8 seconds (typical values)

Latched Address and Data

Automatic Write Timing – Internal VPP Generation

End-of-Write Detection – Toggle Bit – Data# Polling

TTL I/O Compatibility

JEDEC Standard– Flash EEPROM Pinouts and Command Sets

Flash Memory, Microchip


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